4-state model for simulating kinetic and steady-state voltage-dependent gating of gap junctions
M. Snipas, T. Kraujalis, K. Maciunas, L. Kraujaliene, L. Gudaitis, V. K. Verselis
The paper presents a 4-state computational model of gap junction voltage gating, showing it can describe both kinetic and steady-state properties of homotypic and heterotypic channels.
bioRxiv · Oct 29, 2019Biophysics